NCE40ND0812S mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =40V,ID =8A
VDS =40V,ID =12A
RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V
RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 20mΩ @ VGS=4.5V
* High density cell .
General Features
* VDS =40V,ID =8A
VDS =40V,ID =12A
RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V
RDS(ON) .
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